Datasheets
BSD840N by: Infineon Technologies AG

Small Signal Field-Effect Transistor,

Part Details for BSD840N by Infineon Technologies AG

Overview of BSD840N by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BSD840N

Part # Distributor Description Stock Price Buy
Sense Electronic Company Limited SOT-363 5445
RFQ

Part Details for BSD840N

BSD840N CAD Models

BSD840N Part Data Attributes

BSD840N Infineon Technologies AG
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BSD840N Infineon Technologies AG Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.88 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BSD840N

This table gives cross-reference parts and alternative options found for BSD840N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSD840N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PJS6834_S2_00001 Small Signal Field-Effect Transistor PanJit Semiconductor BSD840N vs PJS6834_S2_00001
SQ1902AEL-T1_GE3 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Intertechnologies BSD840N vs SQ1902AEL-T1_GE3
PJX8806_R2_00001 Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 PanJit Semiconductor BSD840N vs PJX8806_R2_00001
FDG6317NZ Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ, 3000-REEL onsemi BSD840N vs FDG6317NZ
FDG6317NZ_NL Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Fairchild Semiconductor Corporation BSD840N vs FDG6317NZ_NL
PMDT290UNEYL PMDT290UNE - 20 V, 800 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin Nexperia BSD840N vs PMDT290UNEYL

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