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Small Signal Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Sense Electronic Company Limited | SOT-363 | 5445 |
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RFQ |
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BSD840N
Infineon Technologies AG
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Datasheet
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BSD840N
Infineon Technologies AG
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 0.88 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSD840N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSD840N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PJS6834_S2_00001 | Small Signal Field-Effect Transistor | PanJit Semiconductor | BSD840N vs PJS6834_S2_00001 |
SQ1902AEL-T1_GE3 | Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Intertechnologies | BSD840N vs SQ1902AEL-T1_GE3 |
PJX8806_R2_00001 | Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | PanJit Semiconductor | BSD840N vs PJX8806_R2_00001 |
FDG6317NZ | Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ, 3000-REEL | onsemi | BSD840N vs FDG6317NZ |
FDG6317NZ_NL | Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Fairchild Semiconductor Corporation | BSD840N vs FDG6317NZ_NL |
PMDT290UNEYL | PMDT290UNE - 20 V, 800 mA dual N-channel Trench MOSFET@en-us SOT 6-Pin | Nexperia | BSD840N vs PMDT290UNEYL |