Datasheets
BSP135 by:

Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BSP135 by Siemens

Overview of BSP135 by Siemens

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Price & Stock for BSP135

Part # Distributor Description Stock Price Buy
Win Source Electronics SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) 168400
  • 55 $0.9330
  • 135 $0.7660
  • 205 $0.7420
  • 280 $0.7180
  • 365 $0.6940
  • 485 $0.6220
$0.6220 / $0.9330 Buy Now

Part Details for BSP135

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BSP135 Part Data Attributes

BSP135 Siemens
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BSP135 Siemens Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 60 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 0.3 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSP135

This table gives cross-reference parts and alternative options found for BSP135. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP135, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP135 vs BSP135E6906
BSP135E-6327 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP135 vs BSP135E-6327
BSP135L6906 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP135 vs BSP135L6906
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP135 vs BSP135E6906
Part Number Description Manufacturer Compare
BSP135E-6327 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP135 vs BSP135E-6327
BSP135L6906 Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP135 vs BSP135L6906
BSP300 Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP135 vs BSP300
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP135 vs BSP129E-6327
BSP129 Power Field-Effect Transistor, 0.19A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP135 vs BSP129
BSP129E-6327 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP135 vs BSP129E-6327
BSP135E6906 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Infineon Technologies AG BSP135 vs BSP135E6906
BSP135E6327 Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP135 vs BSP135E6327
BSP88 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG BSP135 vs BSP88
BSP129E7941 Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens BSP135 vs BSP129E7941

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