Part Details for BUZ32H3045AATMA1 by Infineon Technologies AG
Overview of BUZ32H3045AATMA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUZ32H3045AATMA1
BUZ32H3045AATMA1 CAD Models
BUZ32H3045AATMA1 Part Data Attributes
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BUZ32H3045AATMA1
Infineon Technologies AG
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Datasheet
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BUZ32H3045AATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9.5 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ32H3045AATMA1
This table gives cross-reference parts and alternative options found for BUZ32H3045AATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ32H3045AATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ32HXKSA1 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ32HXKSA1 |
BUZ73AL | Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | BUZ32H3045AATMA1 vs BUZ73AL |
BUZ31H3045A | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ31H3045A |
BUZ73H | 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Rochester Electronics LLC | BUZ32H3045AATMA1 vs BUZ73H |
BUZ32H3045A | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | BUZ32H3045AATMA1 vs BUZ32H3045A |
BUZ31H3046 | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ31H3046 |
BUZ73AL | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ73AL |
BUZ73ALH | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ73ALH |
BUZ73L | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ73L |
BUZ73AHXKSA1 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045AATMA1 vs BUZ73AHXKSA1 |