Part Details for BUZ355 by Siemens
Overview of BUZ355 by Siemens
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ355
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 63 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-218AC | 265 |
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$5.7240 / $14.3100 | Buy Now |
Part Details for BUZ355
BUZ355 CAD Models
BUZ355 Part Data Attributes
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BUZ355
Siemens
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Datasheet
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Compare Parts:
BUZ355
Siemens
Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 140 pF | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 570 ns | |
Turn-on Time-Max (ton) | 230 ns |
Alternate Parts for BUZ355
This table gives cross-reference parts and alternative options found for BUZ355. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ355, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SSH8N80 | Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | BUZ355 vs SSH8N80 |
BUZ355 | 6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | BUZ355 vs BUZ355 |
BUK438-800A | TRANSISTOR 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BUZ355 vs BUK438-800A |
BUZ355 | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | BUZ355 vs BUZ355 |
SSH8N80 | Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | BUZ355 vs SSH8N80 |
STW8NA80 | 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | BUZ355 vs STW8NA80 |