| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ54 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | BUZ54 vs BUZ54 |
Part Details for BUZ54 by Siemens
Results Overview of BUZ54 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ54 Information
BUZ54 by Siemens is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: BUZ54 by Siemens
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
BUZ54 Part Data Attributes
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BUZ54
Siemens
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Datasheet
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BUZ54
Siemens
Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Case Connection | Drain | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 40 Pf | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Pin/Peg | |
| Terminal Position | Bottom | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 690 Ns | |
| Turn-on Time-Max (ton) | 205 Ns |
Alternate Parts for BUZ54
This table gives cross-reference parts and alternative options found for BUZ54. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ54, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
BUZ54 Frequently Asked Questions (FAQ)
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The BUZ54 can operate safely up to 150°C, but it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance.
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The recommended gate drive voltage for the BUZ54 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power losses.
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Yes, the BUZ54 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode. Overcurrent protection can be implemented using a current sense resistor and a comparator or a dedicated overcurrent protection IC.