Part Details for BZD27-C9V1 by NXP Semiconductors
Overview of BZD27-C9V1 by NXP Semiconductors
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Applications
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Energy and Power Systems
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Part Details for BZD27-C9V1
BZD27-C9V1 CAD Models
BZD27-C9V1 Part Data Attributes
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BZD27-C9V1
NXP Semiconductors
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Datasheet
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BZD27-C9V1
NXP Semiconductors
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | HERMETIC SEALED, GLASS PACKAGE-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Breakdown Voltage-Min | 8.5 V | |
| Case Connection | ISOLATED | |
| Clamping Voltage-Max | 13.3 V | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| Non-rep Peak Rev Power Dis-Max | 300 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 0.8 W | |
| Qualification Status | Not Qualified | |
| Reverse Current-Max | 100 µA | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |