Diodes Transient Suppressors BZD27C56P

BZD27C56P by

Description: Surface Mount TVS Diode; Direction: Unidirectional; V(BR) Typ (V): 52V; PPK Max (W): 150W; Condition: 10×1000us; VRWM Max (V): 47V; VBR Min (V): 52.254774V; VBR Max (V): 78.1991793V; IR Max (uA): 5uA; VC Max (V): 78.6V; Package: SOD-123FL

Overview of BZD27C56P by Galaxy Microelectronics

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Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

There are no models available for this part yet.

Show differences only	BZD27C56P Galaxy Microelectronics Buy Now	part-to-be-compared Galaxy Microelectronics Buy Now
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Rohs Code	Yes
Part Life Cycle Code	Active
Ihs Manufacturer	CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code	SOD-123FL
Package Description	SOD-123FL, 2 PIN
Reach Compliance Code	unknown
Breakdown Voltage-Max	60 V
Breakdown Voltage-Min	52 V
Breakdown Voltage-Nom	56 V
Clamping Voltage-Max	78.6 V
Configuration	SINGLE
Diode Element Material	SILICON
Diode Type	TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max	60 Ω
Forward Voltage-Max (VF)	1.2 V
JESD-30 Code	R-PDSO-F2
Non-rep Peak Rev Power Dis-Max	150 W
Number of Elements	1
Number of Terminals	2
Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity	UNIDIRECTIONAL
Power Dissipation-Max	0.8 W
Reference Voltage-Nom	56 V
Rep Pk Reverse Voltage-Max	47 V
Reverse Current-Max	5 µA
Reverse Test Voltage	47 V
Surface Mount	YES
Technology	AVALANCHE
Terminal Form	FLAT
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Voltage Tol-Max	7.1%
Working Test Current	10 mA

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