Part Details for BZD27C82P by Galaxy Microelectronics
Overview of BZD27C82P by Galaxy Microelectronics
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Automotive
Part Details for BZD27C82P
BZD27C82P CAD Models
BZD27C82P Part Data Attributes
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BZD27C82P
Galaxy Microelectronics
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Datasheet
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BZD27C82P
Galaxy Microelectronics
Surface Mount TVS Diode; Direction: Unidirectional; V(BR) Typ (V): 77V; PPK Max (W): 150W; Condition: 10×1000us; VRWM Max (V): 68V; VBR Min (V): 77.3772615V; VBR Max (V): 113.418657V; IR Max (uA): 5uA; VC Max (V): 114V; Package: SOD-123FL
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Part Package Code | SOD-123FL | |
Reach Compliance Code | unknown | |
Breakdown Voltage-Max | 87 V | |
Breakdown Voltage-Min | 77 V | |
Breakdown Voltage-Nom | 82 V | |
Clamping Voltage-Max | 114 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
Dynamic Impedance-Max | 100 Ω | |
Forward Voltage-Max (VF) | 1.2 V | |
JESD-30 Code | R-PDSO-F2 | |
Non-rep Peak Rev Power Dis-Max | 150 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 0.8 W | |
Reference Voltage-Nom | 82 V | |
Rep Pk Reverse Voltage-Max | 68 V | |
Reverse Current-Max | 5 µA | |
Reverse Test Voltage | 68 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Voltage Tol-Max | 6% | |
Working Test Current | 10 mA |