Part Details for BZG04-10 by EIC Semiconductor Inc
Overview of BZG04-10 by EIC Semiconductor Inc
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Part Details for BZG04-10
BZG04-10 CAD Models
BZG04-10 Part Data Attributes
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BZG04-10
EIC Semiconductor Inc
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Datasheet
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BZG04-10
EIC Semiconductor Inc
Zener Diode,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | EIC SEMICONDUCTOR CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Additional Feature | EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY | |
| Breakdown Voltage-Min | 11.4 V | |
| Clamping Voltage-Max | 17 V | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Forward Voltage-Max (VF) | 1.2 V | |
| JESD-30 Code | R-PDSO-C2 | |
| Non-rep Peak Rev Power Dis-Max | 300 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 1.25 W | |
| Rep Pk Reverse Voltage-Max | 10 V | |
| Reverse Current-Max | 5 µA | |
| Reverse Test Voltage | 10 V | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |