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30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-47755-1-ND
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DigiKey | MOSFET N-CH 30V 5.9A 3PICOSTAR Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
51922 In Stock |
|
$0.0962 / $0.4500 | Buy Now |
DISTI #
595-CSD17585F5
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Mouser Electronics | MOSFET 30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 RoHS: Compliant | 34163 |
|
$0.0890 / $0.4100 | Buy Now |
|
Ameya Holding Limited | 30V N CH MOSFET | 20041 |
|
RFQ | |
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Win Source Electronics | 30V N CH MOSFET / 30-V N-Channel FemtoFET MOSFET | 315000 |
|
$0.0950 / $0.1420 | Buy Now |
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CSD17585F5
Texas Instruments
Buy Now
Datasheet
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CSD17585F5
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-11-04 | |
Samacsys Manufacturer | Texas Instruments | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.9 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7.4 pF | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Surface Mount | YES | |
Terminal Finish | NICKEL GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD17585F5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17585F5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD17585F5T | 30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Texas Instruments | CSD17585F5 vs CSD17585F5T |