Part Details for CSD25303W1015 by Texas Instruments
Overview of CSD25303W1015 by Texas Instruments
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD25303W1015
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Small Signal Field-Effect Transistor, 3A, 20V, P-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4390 |
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$0.2610 / $0.3071 | Buy Now |
Part Details for CSD25303W1015
CSD25303W1015 CAD Models
CSD25303W1015 Part Data Attributes
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CSD25303W1015
Texas Instruments
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Datasheet
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CSD25303W1015
Texas Instruments
P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Part Package Code | CSP | |
Package Description | 1.50 X 1 MM, 0.62 MM HEIGHT, CSP-6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.092 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 65 pF | |
JESD-30 Code | R-PBGA-B6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for CSD25303W1015
This table gives cross-reference parts and alternative options found for CSD25303W1015. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD25303W1015, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APM2301CAC-TRG | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 | American Power Devices Inc | CSD25303W1015 vs APM2301CAC-TRG |
SI2301CDS-T1-GE3 | Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | CSD25303W1015 vs SI2301CDS-T1-GE3 |
MCH3377-TL-W | Single P-Channel Power MOSFET -20V, -3A, 83mΩ, SC 70FL / MCPH3, 3000-REEL | onsemi | CSD25303W1015 vs MCH3377-TL-W |
MCH3377 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MCPH3, 3 PIN | SANYO Semiconductor Co Ltd | CSD25303W1015 vs MCH3377 |
CPH3350-TL-W | P-Channel Power MOSFET, -20V, -3A, 83mΩ, CPH3, 3000-REEL | onsemi | CSD25303W1015 vs CPH3350-TL-W |
SI2301CDS-T1-E3 | TRANSISTOR 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal | Vishay Siliconix | CSD25303W1015 vs SI2301CDS-T1-E3 |
DMP2123L-7 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | CSD25303W1015 vs DMP2123L-7 |
MCH3377 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MCPH3, 3 PIN | SANYO Electric Co Ltd | CSD25303W1015 vs MCH3377 |
SI2301CDS-T1-E3 | Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | CSD25303W1015 vs SI2301CDS-T1-E3 |