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Part Details for CSD25304W1015 by Texas Instruments
Overview of CSD25304W1015 by Texas Instruments
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD25304W1015
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-40005-1-ND
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DigiKey | MOSFET P-CH 20V 3A 6DSBGA Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2900 In Stock |
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$0.1313 / $0.5100 | Buy Now |
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DISTI #
595-CSD25304W1015
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Mouser Electronics | MOSFET 20V P-channel NexFET Pwr MOSFET RoHS: Compliant | 3045 |
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$0.1310 / $0.5100 | Buy Now |
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Ameya Holding Limited | 572045 |
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RFQ |
Part Details for CSD25304W1015
CSD25304W1015 CAD Models
CSD25304W1015 Part Data Attributes
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CSD25304W1015
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD25304W1015
Texas Instruments
-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm 6-DSBGA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | GRID ARRAY, R-XBGA-B6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.40 | |
| Samacsys Manufacturer | Texas Instruments | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | -3 A | |
| Drain-source On Resistance-Max | 0.092 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15.6 pF | |
| JESD-30 Code | R-XBGA-B6 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 0.75 W | |
| Power Dissipation-Max (Abs) | 0.75 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD25304W1015
This table gives cross-reference parts and alternative options found for CSD25304W1015. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD25304W1015, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDZ191P | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.65 MM HEIGHT, ULTRA THIN, BGA-6 | Fairchild Semiconductor Corporation | CSD25304W1015 vs FDZ191P |