Part Details for CY7C1312KV18-250BZXCT by Cypress Semiconductor
Overview of CY7C1312KV18-250BZXCT by Cypress Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for CY7C1312KV18-250BZXCT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45T1806
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Newark | Sync Srams/Reel |Cypress Infineon Technologies CY7C1312KV18-250BZXCT Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Part Details for CY7C1312KV18-250BZXCT
CY7C1312KV18-250BZXCT CAD Models
CY7C1312KV18-250BZXCT Part Data Attributes
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CY7C1312KV18-250BZXCT
Cypress Semiconductor
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Datasheet
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CY7C1312KV18-250BZXCT
Cypress Semiconductor
Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | STANDARD SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.25 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.56 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 13 mm |
Alternate Parts for CY7C1312KV18-250BZXCT
This table gives cross-reference parts and alternative options found for CY7C1312KV18-250BZXCT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1312KV18-250BZXCT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1312KV18-250BZC | QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | Infineon Technologies AG | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZC |
| CY7C1312KV18-250BZXI | QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | Infineon Technologies AG | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZXI |
| CY7C1312KV18-250BZXCT | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZXCT |
| CY7C1312KV18-250BZC | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZC |
| CY7C1312KV18-250BZXI | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZXI |
| CY7C1312KV18-250BZXC | QDR II SRAM, 1MX18, 0.45ns, CMOS, PBGA165, | Infineon Technologies AG | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZXC |
| CY7C1312KV18-250BZXC | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZXC |
| CY7C1312KV18-250BZCT | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1312KV18-250BZXCT vs CY7C1312KV18-250BZCT |