Part Details for CY7C1315BV18-200BZXC by Cypress Semiconductor
Overview of CY7C1315BV18-200BZXC by Cypress Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CY7C1315BV18-200BZXC
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | QDR SRAM, 512KX36, 0.45ns PBGA165 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 554 |
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$28.7600 / $33.8300 | Buy Now |
Part Details for CY7C1315BV18-200BZXC
CY7C1315BV18-200BZXC CAD Models
CY7C1315BV18-200BZXC Part Data Attributes
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CY7C1315BV18-200BZXC
Cypress Semiconductor
Buy Now
Datasheet
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CY7C1315BV18-200BZXC
Cypress Semiconductor
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e1 | |
Length | 15 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 36 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 524288 words | |
Number of Words Code | 512000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 512KX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.22 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.45 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Width | 13 mm |
Alternate Parts for CY7C1315BV18-200BZXC
This table gives cross-reference parts and alternative options found for CY7C1315BV18-200BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1315BV18-200BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CY7C1315CV18-200BZI | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315CV18-200BZI |
CY7C1315BV18-200BZC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315BV18-200BZC |
K7R163682B-FC20T | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1315BV18-200BZXC vs K7R163682B-FC20T |
CY7C1315CV18-200BZXC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315CV18-200BZXC |
UPD44165364AF5-E50-EQ2 | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165 | NEC Electronics Group | CY7C1315BV18-200BZXC vs UPD44165364AF5-E50-EQ2 |
CY7C1315AV18-200BZC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315AV18-200BZC |
CY7C1315BV18-200BZI | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315BV18-200BZI |
UPD44165364AF5-E50-EQ2 | 512KX36 QDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, PLASTIC, BGA-165 | Renesas Electronics Corporation | CY7C1315BV18-200BZXC vs UPD44165364AF5-E50-EQ2 |
K7R163682B-EC200 | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | CY7C1315BV18-200BZXC vs K7R163682B-EC200 |
CY7C1315CV18-200BZC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315BV18-200BZXC vs CY7C1315CV18-200BZC |