Datasheets
CY7C1414KV18-250BZXI by:

QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

Part Details for CY7C1414KV18-250BZXI by Cypress Semiconductor

Overview of CY7C1414KV18-250BZXI by Cypress Semiconductor

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Price & Stock for CY7C1414KV18-250BZXI

Part # Distributor Description Stock Price Buy
DISTI # 2832-CY7C1414KV18-250BZXI-ND
DigiKey IC SRAM 36MBIT PAR 165FBGA Min Qty: 15 Lead time: 1 Weeks Container: Tray MARKETPLACE PRODUCT 1107
In Stock
  • 15 $37.9907
$37.9907 Buy Now
Onlinecomponents.com   RoHS: Compliant 76 Partner Stock
  • 1 $130.2500
  • 5 $51.9900
  • 10 $49.3900
  • 25 $46.9200
  • 50 $44.5700
  • 100 $42.3400
$42.3400 / $130.2500 Buy Now
Rochester Electronics CY7C1414KV18 - QDR SRAM, 1MX36, 0.45ns PBGA165 RoHS: Compliant Status: Active Min Qty: 1 142
  • 1 $43.2800
  • 25 $42.4200
  • 100 $40.6900
  • 500 $38.9600
  • 1,000 $36.7900
$36.7900 / $43.2800 Buy Now
Flip Electronics Stock, ship today 1379
  • 1 $28.4900
$28.4900 RFQ

Part Details for CY7C1414KV18-250BZXI

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CY7C1414KV18-250BZXI Part Data Attributes

CY7C1414KV18-250BZXI Cypress Semiconductor
Buy Now Datasheet
Compare Parts:
CY7C1414KV18-250BZXI Cypress Semiconductor QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 37748736 bit
Memory IC Type QDR SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 1MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.26 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.73 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 13 mm

Alternate Parts for CY7C1414KV18-250BZXI

This table gives cross-reference parts and alternative options found for CY7C1414KV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1414KV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1414KV18-250BZCT QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZCT
CY7C1414KV18-250BZC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZC
CY7C1414KV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZI
CY7C1414BV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1414BV18-250BZXC
CY7C1414KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZXC
CY7C1414KV18-250BZI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZI
CY7C1414KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZXC
CY7C1414KV18-250BZXI QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZXI
CY7C1414KV18-250BZC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZC
K7R323682M-FC250 QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7R323682M-FC250
Part Number Description Manufacturer Compare
CY7C1412KV18-250BZXC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1412KV18-250BZXC
K7S3218U4C-FI400 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7S3218U4C-FI400
CY7C1412BV18-250BZI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1412BV18-250BZI
CY7C1412KV18-250BZC QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1412KV18-250BZC
CY7C1414KV18-250BZCT QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, Infineon Technologies AG CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZCT
K7S3218T4C-EC450 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANTFBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7S3218T4C-EC450
K7S3218U4C-FC400 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7S3218U4C-FC400
K7S3218T4C-EC330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7S3218T4C-EC330
K7S3218U4C-EI330 QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor CY7C1414KV18-250BZXI vs K7S3218U4C-EI330
CY7C1414KV18-250BZXC QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1414KV18-250BZXI vs CY7C1414KV18-250BZXC

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