Part Details for CY7C1518KV18-250BZXI by Cypress Semiconductor
Overview of CY7C1518KV18-250BZXI by Cypress Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Education and Research
Space Technology
Computing and Data Storage
Aerospace and Defense
Price & Stock for CY7C1518KV18-250BZXI
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-CY7C1518KV18-250BZXI-ND
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DigiKey | IC SRAM 72MBIT PAR 165FBGA Min Qty: 3 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1507 In Stock |
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$123.9000 | Buy Now |
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DISTI #
2832-CY7C1518KV18-250BZXI-ND
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DigiKey | IC SRAM 72MBIT PAR 165FBGA Min Qty: 3 Lead time: 1 Weeks Container: Tray MARKETPLACE PRODUCT |
964 In Stock |
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$87.3260 | Buy Now |
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Rochester Electronics | CY7C1518KV18 - DDR SRAM, 4MX18, 0.45ns PBGA165 RoHS: Compliant Status: Active Min Qty: 1 | 1507 |
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$106.3200 / $125.0800 | Buy Now |
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Flip Electronics | Stock, ship today | 964 |
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$65.4900 | RFQ |
Part Details for CY7C1518KV18-250BZXI
CY7C1518KV18-250BZXI CAD Models
CY7C1518KV18-250BZXI Part Data Attributes
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CY7C1518KV18-250BZXI
Cypress Semiconductor
Buy Now
Datasheet
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Compare Parts:
CY7C1518KV18-250BZXI
Cypress Semiconductor
DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.43 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 13 mm |
Alternate Parts for CY7C1518KV18-250BZXI
This table gives cross-reference parts and alternative options found for CY7C1518KV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1518KV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K7I641882M-EI250 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | CY7C1518KV18-250BZXI vs K7I641882M-EI250 |
| CY7C1518V18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1518KV18-250BZXI vs CY7C1518V18-250BZXI |
| K7I641882M-FI250 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1518KV18-250BZXI vs K7I641882M-FI250 |
| CY7C1518JV18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1518KV18-250BZXI vs CY7C1518JV18-250BZXI |
| CY7C1518KV18-250BZI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1518KV18-250BZXI vs CY7C1518KV18-250BZI |
| CY7C1518JV18-250BZI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1518KV18-250BZXI vs CY7C1518JV18-250BZI |
| GS8672T18BE-250I | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | CY7C1518KV18-250BZXI vs GS8672T18BE-250I |
| CY7C1518KV18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1518KV18-250BZXI vs CY7C1518KV18-250BZXI |
| CY7C1518AV18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1518KV18-250BZXI vs CY7C1518AV18-250BZXI |
| GS8672T18BE-250IT | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | CY7C1518KV18-250BZXI vs GS8672T18BE-250IT |