Part Details for K7I641882M-EI250 by Samsung Semiconductor
Overview of K7I641882M-EI250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K7I641882M-EI250
K7I641882M-EI250 CAD Models
K7I641882M-EI250 Part Data Attributes:
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K7I641882M-EI250
Samsung Semiconductor
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Datasheet
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K7I641882M-EI250
Samsung Semiconductor
DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 17 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 15 mm |
Alternate Parts for K7I641882M-EI250
This table gives cross-reference parts and alternative options found for K7I641882M-EI250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I641882M-EI250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1518V18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7I641882M-EI250 vs CY7C1518V18-250BZXI |
| GS8662T18BD-250I | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7I641882M-EI250 vs GS8662T18BD-250I |
| CY7C1518KV18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Infineon Technologies AG | K7I641882M-EI250 vs CY7C1518KV18-250BZXI |
| GS8662T18BGD-250I | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I641882M-EI250 vs GS8662T18BGD-250I |
| CY7C1518KV18-250BZI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | K7I641882M-EI250 vs CY7C1518KV18-250BZI |
| GS8672T18BE-250IT | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | K7I641882M-EI250 vs GS8672T18BE-250IT |
| CY7C1518AV18-250BZI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7I641882M-EI250 vs CY7C1518AV18-250BZI |
| GS8662T18BGD-250IT | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I641882M-EI250 vs GS8662T18BGD-250IT |
| GS8672T18BE-250I | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | K7I641882M-EI250 vs GS8672T18BE-250I |
| CY7C1518AV18-250BZXI | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7I641882M-EI250 vs CY7C1518AV18-250BZXI |