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Overview of DBLS106GHC1G by Taiwan Semiconductor
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
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CAD Models for DBLS106GHC1G by Taiwan Semiconductor
Part Data Attributes for DBLS106GHC1G by Taiwan Semiconductor
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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TAIWAN SEMICONDUCTOR CO LTD
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Package Description
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R-PDSO-G4
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.10.00.80
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Samacsys Manufacturer
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Taiwan Semiconductor
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Breakdown Voltage-Min
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800 V
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Configuration
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BRIDGE, 4 ELEMENTS
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Diode Element Material
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SILICON
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Diode Type
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BRIDGE RECTIFIER DIODE
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Forward Voltage-Max (VF)
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1.1 V
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JESD-30 Code
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R-PDSO-G4
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Non-rep Pk Forward Current-Max
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30 A
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Number of Elements
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4
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Number of Phases
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1
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Number of Terminals
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4
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Output Current-Max
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1 A
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Reference Standard
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AEC-Q101; UL RECOGNIZED
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Rep Pk Reverse Voltage-Max
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800 V
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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30
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