Datasheets
EDB101S by:

Bridge Rectifier Diode, 1A, 50V V(RRM),

Part Details for EDB101S by Galaxy Microelectronics

Overview of EDB101S by Galaxy Microelectronics

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for EDB101S

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EDB101S Part Data Attributes

EDB101S Galaxy Microelectronics
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EDB101S Galaxy Microelectronics Bridge Rectifier Diode, 1A, 50V V(RRM),
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Breakdown Voltage-Min 50 V
Configuration BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 30 A
Number of Elements 4
Number of Phases 1
Operating Temperature-Max 150 °C
Output Current-Max 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount YES

Alternate Parts for EDB101S

This table gives cross-reference parts and alternative options found for EDB101S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDB101S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KBP101GC2G Bridge Rectifier Diode, 1A, 50V V(RRM), Taiwan Semiconductor EDB101S vs KBP101GC2G

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