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Memory DRAMs EDE1116AEBG-8E-F

Memory
EDE1116AEBG-8E-F
Elpida Memory Inc
Description: DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

Overview of EDE1116AEBG-8E-F by Elpida Memory Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Healthcare Renewable Energy Robotics and Drones

Available Datasheets

Part # Manufacturer Description Datasheet
LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85

Price & Stock for EDE1116AEBG-8E-F by Elpida Memory Inc

Part # Manufacturer Description Stock Price Buy
Quest Components DDR DRAM, 64MX16, 0.4NS, CMOS, PBGA84 856
  • 1 $10.5000
  • 477 $3.8500
  • 780 $3.6750
$3.6750 / $10.5000 Buy Now

CAD Models for EDE1116AEBG-8E-F by Elpida Memory Inc
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Part Data Attributes for EDE1116AEBG-8E-F by Elpida Memory Inc
Parametric Data

EDE1116AEBG-8E-F
Elpida Memory Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ELPIDA MEMORY INC
Part Package Code
BGA
Package Description
TFBGA, BGA84,9X15,32
Pin Count
84
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
Length
12.5 mm
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
64MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.01 A
Supply Current-Max
0.35 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
Want to compare parts?
  1. EDE1116AEBG-8E-F
    Elpida Memory Inc
    DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
    VS

Alternate Parts for EDE1116AEBG-8E-F

This table gives cross-reference parts and alternative options found for EDE1116AEBG-8E-F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDE1116AEBG-8E-F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
EDE1116AJBG-8E-F DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Elpida Memory Inc EDE1116AEBG-8E-F vs EDE1116AJBG-8E-F
Part Number Description Manufacturer Compare
H5PS1G63EFR-S6L DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 SK Hynix Inc EDE1116AEBG-8E-F vs H5PS1G63EFR-S6L
H5PS1G63EFR-S5P DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 SK Hynix Inc EDE1116AEBG-8E-F vs H5PS1G63EFR-S5P
MT47H64M16HR-3LIT:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc EDE1116AEBG-8E-F vs MT47H64M16HR-3LIT:H
IS43DR16640B-3DBI DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 Integrated Silicon Solution Inc EDE1116AEBG-8E-F vs IS43DR16640B-3DBI
IS43DR16640B-3DBLI DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc EDE1116AEBG-8E-F vs IS43DR16640B-3DBLI
MT47H64M16HR-37EL:H DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc EDE1116AEBG-8E-F vs MT47H64M16HR-37EL:H
HYB18T1G160C2F-25F DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG EDE1116AEBG-8E-F vs HYB18T1G160C2F-25F
MT47H64M16HR-3AAT DDR DRAM, Micron Technology Inc EDE1116AEBG-8E-F vs MT47H64M16HR-3AAT
MT47H64M16HW-25LIT:H DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc EDE1116AEBG-8E-F vs MT47H64M16HW-25LIT:H
HYB18T1G160C2F-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG EDE1116AEBG-8E-F vs HYB18T1G160C2F-2.5

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