Part Details for EM636165TS-6G by Etron Technology Inc
Overview of EM636165TS-6G by Etron Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for EM636165TS-6G
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 1849 |
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$0.5445 / $1.6500 | Buy Now |
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Quest Components | DRAM (Dynamic RAM) | 2365 |
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$0.5906 / $1.4063 | Buy Now |
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Quest Components | DRAM (Dynamic RAM) | 1479 |
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$0.6050 / $2.2000 | Buy Now |
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Quest Components | DRAM (Dynamic RAM) | 40 |
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$1.4063 / $2.2500 | Buy Now |
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NAC | 16 Mb 1M X 16 SDRAM TSOP II Comm Temp RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 20 |
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$0.7500 / $1.2500 | Buy Now |
Part Details for EM636165TS-6G
EM636165TS-6G CAD Models
EM636165TS-6G Part Data Attributes
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EM636165TS-6G
Etron Technology Inc
Buy Now
Datasheet
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EM636165TS-6G
Etron Technology Inc
Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOP2-50
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ETRON TECHNOLOGY INC | |
Package Description | TSOP2, | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G50 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for EM636165TS-6G
This table gives cross-reference parts and alternative options found for EM636165TS-6G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EM636165TS-6G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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EM636165TS-7G | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOP2-50 | Etron Technology Inc | EM636165TS-6G vs EM636165TS-7G |
HY57V161610FT-6I | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FT-6I |
V54C317162VCT-55 | Synchronous DRAM, 1MX16, 5.3ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | EM636165TS-6G vs V54C317162VCT-55 |
W9816G6JB-6 | Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60, 6.40 X 10.10 MM, 0.65 MM PITCH, ROHS COMPLIANT, VFBGA-60 | Winbond Electronics Corp | EM636165TS-6G vs W9816G6JB-6 |
HY57V161610FT-6 | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FT-6 |
V54C31616G2V-6 | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | EM636165TS-6G vs V54C31616G2V-6 |
HY57V161610FTP-6I | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FTP-6I |
HY57V161610FTP-7 | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FTP-7 |
HY57V161610FTP-H | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FTP-H |
HY57V161610FTP-HI | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | EM636165TS-6G vs HY57V161610FTP-HI |