Part Details for EM6A9160TSC-5G by Etron Technology Inc
Overview of EM6A9160TSC-5G by Etron Technology Inc
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for EM6A9160TSC-5G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 8M X 16 DDR SYNCHRONOUS DRAM (SDRAM), TSOP66 | 193 |
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$1.0125 / $1.8750 | Buy Now |
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NAC | 128 Mb 8M X 16 DDR SDRAM TSOP II Comm Temp RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 14 |
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$1.0000 / $1.1700 | Buy Now |
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DISTI #
EM6A9160TSC-5G
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Avnet Asia | DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II (Alt: EM6A9160TSC-5G) RoHS: Compliant Min Qty: 1080 Package Multiple: 1080 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ |
Part Details for EM6A9160TSC-5G
EM6A9160TSC-5G CAD Models
EM6A9160TSC-5G Part Data Attributes
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EM6A9160TSC-5G
Etron Technology Inc
Buy Now
Datasheet
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Compare Parts:
EM6A9160TSC-5G
Etron Technology Inc
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOPII-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ETRON TECHNOLOGY INC | |
| Package Description | TSOP2, | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for EM6A9160TSC-5G
This table gives cross-reference parts and alternative options found for EM6A9160TSC-5G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EM6A9160TSC-5G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT5DS8M16IS-5TI | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | Nanya Technology Corporation | EM6A9160TSC-5G vs NT5DS8M16IS-5TI |
| KM416L8031BT-FZ0 | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 | Samsung Semiconductor | EM6A9160TSC-5G vs KM416L8031BT-FZ0 |
| W94124G6KH-6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | EM6A9160TSC-5G vs W94124G6KH-6I |
| W9412G6JH-6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | EM6A9160TSC-5G vs W9412G6JH-6I |
| M13S128168A-5TG2N | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EM6A9160TSC-5G vs M13S128168A-5TG2N |
| MT46V8M16P6TDTR | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | EM6A9160TSC-5G vs MT46V8M16P6TDTR |
| KM416L8031BT-GZ0 | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 | Samsung Semiconductor | EM6A9160TSC-5G vs KM416L8031BT-GZ0 |
| NT5DS8M16IS-5T | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | Nanya Technology Corporation | EM6A9160TSC-5G vs NT5DS8M16IS-5T |
| W94124G6KH-5I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | EM6A9160TSC-5G vs W94124G6KH-5I |
| NT5DS8M16IS-6KI | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 | Nanya Technology Corporation | EM6A9160TSC-5G vs NT5DS8M16IS-6KI |