Datasheets
FDG315N by:

Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Part Details for FDG315N by Fairchild Semiconductor Corporation

Overview of FDG315N by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDG315N

Part # Distributor Description Stock Price Buy
Bristol Electronics   16499
RFQ
Quest Components 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 182
  • 1 $0.5391
  • 46 $0.3594
  • 168 $0.2516
$0.2516 / $0.5391 Buy Now
Quest Components 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 13199
  • 1 $2.5000
  • 801 $0.8750
  • 1,715 $0.7500
$0.7500 / $2.5000 Buy Now
Sense Electronic Company Limited SOT-363 3000
RFQ

Part Details for FDG315N

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FDG315N Part Data Attributes

FDG315N Fairchild Semiconductor Corporation
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FDG315N Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SC-70
Package Description SC-70, 6 PIN
Pin Count 6
Manufacturer Package Code 6LD,SC70,EIAJ SC-88,1.25MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.75 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDG315N

This table gives cross-reference parts and alternative options found for FDG315N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG315N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG315N_NL Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG315N vs FDG315N_NL
FDG315ND87Z Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG315N vs FDG315ND87Z
FDG315N N-Channel Logic Level PowerTrench® MOSFET 30 V, 2 A, 120 mΩ, 3000-REEL onsemi FDG315N vs FDG315N
Part Number Description Manufacturer Compare
FDG311N Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG315N vs FDG311N
FDG327N N-Channel PowerTrench® MOSFET, 20V, 1.5 A, 90 mΩ, 3000-REEL onsemi FDG315N vs FDG327N
FDG327NZ 1500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG315N vs FDG327NZ

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