Transistors
FDG6335N
Description: 700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN

Overview of FDG6335N by Rochester Electronics LLC

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Part Data Attributes for FDG6335N by Rochester Electronics LLC

FDG6335N
Rochester Electronics LLC
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
SC-70
Package Description
SC-70, 6 PIN
Pin Count
6
Reach Compliance Code
unknown
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
0.7 A
Drain-source On Resistance-Max
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDG6335N
    Rochester Electronics LLC
    700mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN
    VS

Alternate Parts for FDG6335N

This table gives cross-reference parts and alternative options found for FDG6335N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6335N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDG6335N Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6335N
FDG6335ND87Z Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6335ND87Z
FDG6335N N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ, 3000-REEL onsemi FDG6335N vs FDG6335N
Part Number Description Manufacturer Compare
FDG6301ND87Z Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6301ND87Z
FDG6303NL99Z Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDG6335N vs FDG6303NL99Z
FDG6303N 500mA, 25V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG6335N vs FDG6303N
SI1900DL-T1-E3 Small Signal Field-Effect Transistor, 0.59A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies FDG6335N vs SI1900DL-T1-E3
SIA922EDJ-T1-GE3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 Vishay Intertechnologies FDG6335N vs SIA922EDJ-T1-GE3
FDG6303ND87Z Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6303ND87Z
FDG6335ND87Z Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6335ND87Z
FDG6335N N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ, 3000-REEL onsemi FDG6335N vs FDG6335N
FDG6303N_NL Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6335N vs FDG6303N_NL
SI1972DH-T1-E3 Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Intertechnologies FDG6335N vs SI1972DH-T1-E3

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