Datasheets
FDMS3669S by:

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Part Details for FDMS3669S by Fairchild Semiconductor Corporation

Overview of FDMS3669S by Fairchild Semiconductor Corporation

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Price & Stock for FDMS3669S

Part # Distributor Description Stock Price Buy
DISTI # 2156-FDMS3669S-ND
DigiKey MOSFET 2N-CH 30V 13A/24A 8PQFN Min Qty: 353 Container: Bulk MARKETPLACE PRODUCT 3556
In Stock
  • 353 $0.8500
$0.8500 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET, MO-240AA RoHS: Compliant Status: Active Min Qty: 1 3556
  • 1 $0.8604
  • 25 $0.8432
  • 100 $0.8088
  • 500 $0.7744
  • 1,000 $0.7313
$0.7313 / $0.8604 Buy Now

Part Details for FDMS3669S

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FDMS3669S Part Data Attributes

FDMS3669S Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDMS3669S Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code QFN
Package Description ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pin Count 8
Manufacturer Package Code 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN SOURCE
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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