Part Details for FDMS3669S by onsemi
Overview of FDMS3669S by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FDMS3669S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
96W6422
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Newark | Pt7N 30/20 And Pt8N 30/12/Reel Rohs Compliant: Yes |Onsemi FDMS3669S Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7500 / $0.9740 | Buy Now |
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DISTI #
FDMS3669SCT-ND
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DigiKey | MOSFET 2N-CH 30V 13A/18A POWER56 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3190 In Stock |
|
$0.7375 / $1.7600 | Buy Now |
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DISTI #
FDMS3669S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3669S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 156000 Factory Stock |
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$0.7316 / $0.8732 | Buy Now |
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DISTI #
FDMS3669S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3669S) RoHS: Compliant Min Qty: 407 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 156000 Partner Stock |
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$1.5252 / $1.8204 | Buy Now |
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DISTI #
512-FDMS3669S
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Mouser Electronics | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | 25785 |
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$0.7230 / $1.7600 | Buy Now |
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Future Electronics | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.7450 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET, MO-240AA RoHS: Compliant Status: Active Min Qty: 1 | 1524 |
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$0.7313 / $0.8604 | Buy Now |
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DISTI #
FDMS3669S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3669S) RoHS: Compliant Min Qty: 407 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 156000 Partner Stock |
|
$1.5252 / $1.8204 | Buy Now |
|
DISTI #
FDMS3669S
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3669S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 156000 Factory Stock |
|
$0.7316 / $0.8732 | Buy Now |
|
DISTI #
FDMS3669S
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TME | Transistor: N-MOSFET x2, unipolar, 30/30V, 24/60A, 2.2/2.5W Min Qty: 1 | 0 |
|
$0.7400 / $1.1100 | RFQ |
Part Details for FDMS3669S
FDMS3669S CAD Models
FDMS3669S Part Data Attributes
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FDMS3669S
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS3669S
onsemi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | QFN-8 | |
| Manufacturer Package Code | 483AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 54 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |