Datasheets
FDN308P by:

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

Part Details for FDN308P by Fairchild Semiconductor Corporation

Overview of FDN308P by Fairchild Semiconductor Corporation

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Price & Stock for FDN308P

Part # Distributor Description Stock Price Buy
Bristol Electronics   58
RFQ
Chip 1 Exchange INSTOCK 3896
RFQ
Win Source Electronics MOSFET P-CH 20V 1.5A SSOT-3 / Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-23 T/R 75000
  • 22 $2.3290
  • 53 $1.9110
  • 82 $1.8510
  • 112 $1.7910
  • 145 $1.7320
  • 194 $1.5530
$1.5530 / $2.3290 Buy Now

Part Details for FDN308P

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FDN308P Part Data Attributes:

FDN308P Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDN308P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description SUPERSOT-3
Pin Count 3
Manufacturer Package Code MOLDED PACKAGE, SUPERSOT, 3 LEAD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDN308P

This table gives cross-reference parts and alternative options found for FDN308P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN308P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDN308P_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308P_NL
FDN308P 1500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC FDN308P vs FDN308P
FDN308P P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -1.5A, 125mΩ, 3000-REEL onsemi FDN308P vs FDN308P
FDN308PD87Z Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308PD87Z
LT2349E Small Signal Field-Effect Transistor, 1.88A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Lite-On Semiconductor Corporation FDN308P vs LT2349E
FDN308PT/R_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308PT/R_NL
Part Number Description Manufacturer Compare
FDN308P_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308P_NL
FDN308PT/R_NL Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308PT/R_NL
SI1317DL-T1-GE3 Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, SOT-323, 3 PIN Vishay Intertechnologies FDN308P vs SI1317DL-T1-GE3
DMP2240UW-7 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated FDN308P vs DMP2240UW-7
FDN308PD87Z Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN308P vs FDN308PD87Z
BSS215PL6327 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FDN308P vs BSS215PL6327
DMP2240UWQ-7 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated FDN308P vs DMP2240UWQ-7
FDN308P 1500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC FDN308P vs FDN308P
BSS215PH6327XTSA1 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FDN308P vs BSS215PH6327XTSA1
LT2349E Small Signal Field-Effect Transistor, 1.88A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Lite-On Semiconductor Corporation FDN308P vs LT2349E

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