Datasheets
FHX05LG by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN

Part Details for FHX05LG by SUMITOMO ELECTRIC Industries Ltd

Overview of FHX05LG by SUMITOMO ELECTRIC Industries Ltd

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Part Details for FHX05LG

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FHX05LG Part Data Attributes:

FHX05LG SUMITOMO ELECTRIC Industries Ltd
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FHX05LG SUMITOMO ELECTRIC Industries Ltd RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description DISK BUTTON, O-CRDB-F4
Pin Count 4
Manufacturer Package Code CASE LG
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 3.5 V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band KU BAND
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 9.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FHX05LG

This table gives cross-reference parts and alternative options found for FHX05LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX05LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FHX05LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN SUMITOMO ELECTRIC Device Innovations Inc FHX05LG vs FHX05LG
Part Number Description Manufacturer Compare
FHX05LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN SUMITOMO ELECTRIC Device Innovations Inc FHX05LG vs FHX05LG

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