Part Details for FQD20N06L by Fairchild Semiconductor Corporation
Overview of FQD20N06L by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQD20N06L
FQD20N06L CAD Models
FQD20N06L Part Data Attributes
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FQD20N06L
Fairchild Semiconductor Corporation
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Datasheet
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FQD20N06L
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 17.2 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Pulsed Drain Current-Max (IDM) | 68.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQD20N06L
This table gives cross-reference parts and alternative options found for FQD20N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD20N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQD20N06LETF | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD20N06L vs FQD20N06LETF |
IRL5NJ024SCX | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | FQD20N06L vs IRL5NJ024SCX |
IRFZ24NPBF | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | FQD20N06L vs IRFZ24NPBF |
IRL5NJ024PBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | FQD20N06L vs IRL5NJ024PBF |
IRL5NJ024 | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | FQD20N06L vs IRL5NJ024 |
NTDV18N06LT4G | Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | FQD20N06L vs NTDV18N06LT4G |
IPD640N06LGBTMA1 | Power Field-Effect Transistor, 18A I(D), 60V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | FQD20N06L vs IPD640N06LGBTMA1 |
IRFZ24NHR | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | FQD20N06L vs IRFZ24NHR |
IRLZ24NS | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | FQD20N06L vs IRLZ24NS |