Part Details for FQU8P10TU by Fairchild Semiconductor Corporation
Overview of FQU8P10TU by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQU8P10TU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQU8P10TU-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 6 Min Qty: 745 Container: Bulk MARKETPLACE PRODUCT |
43870 In Stock |
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$0.4000 | Buy Now |
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Rochester Electronics | FQU8P10 - Power Field-Effect Transistor, 6.6A, 100V, 0.53ohm, P-Channel, MOSFET, TO-251 RoHS: Compliant Status: Obsolete Min Qty: 1 | 94502 |
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$0.3459 / $0.4069 | Buy Now |
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ComSIT USA | -100 V, -6.6 A, 530 MILLI OHM P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Not Compliant | Europe - 1960 |
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RFQ | |
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Chip1Cloud | MOSFET P-CH 100V 6.6A IPAK | 22000 |
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RFQ |
Part Details for FQU8P10TU
FQU8P10TU CAD Models
FQU8P10TU Part Data Attributes:
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FQU8P10TU
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQU8P10TU
Fairchild Semiconductor Corporation
P-Channel QFET® MOSFET -100V, -6.6A, 530mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-251 | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO251 (IPAK) MOLDED,3 LEAD | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6.6 A | |
| Drain-source On Resistance-Max | 0.53 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 44 W | |
| Pulsed Drain Current-Max (IDM) | 26.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQU8P10TU
This table gives cross-reference parts and alternative options found for FQU8P10TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU8P10TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU8P10 | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU8P10TU vs FQU8P10 |
| FQU8P10TU | Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK, 5040-TUBE | onsemi | FQU8P10TU vs FQU8P10TU |