Part Details for H55S1222EFP-60M by SK Hynix Inc
Overview of H55S1222EFP-60M by SK Hynix Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for H55S1222EFP-60M
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 156 |
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RFQ |
Part Details for H55S1222EFP-60M
H55S1222EFP-60M CAD Models
H55S1222EFP-60M Part Data Attributes
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H55S1222EFP-60M
SK Hynix Inc
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Datasheet
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H55S1222EFP-60M
SK Hynix Inc
Static Column DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | STATIC COLUMN DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -30 °C | |
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.09 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H55S1222EFP-60M
This table gives cross-reference parts and alternative options found for H55S1222EFP-60M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H55S1222EFP-60M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S56323PF-FG750 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4S56323PF-FG750 |
| MT48V4M32LFFC-8 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 | Micron Technology Inc | H55S1222EFP-60M vs MT48V4M32LFFC-8 |
| W987D2HBJX7I | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, VFBGA-90 | Winbond Electronics Corp | H55S1222EFP-60M vs W987D2HBJX7I |
| K4M56323LG-FN7L0 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4M56323LG-FN7L0 |
| K4M28323PH-HF900 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4M28323PH-HF900 |
| K4S28323LE-DS600 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4S28323LE-DS600 |
| MT46H8M32LFB5-54:H | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | H55S1222EFP-60M vs MT46H8M32LFB5-54:H |
| IS43LR32400D-5BLI | DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90 | Integrated Silicon Solution Inc | H55S1222EFP-60M vs IS43LR32400D-5BLI |
| K4S28323LE-SS1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4S28323LE-SS1H0 |
| K4S563233F-FC1L0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | H55S1222EFP-60M vs K4S563233F-FC1L0 |