Datasheets
H5DU2562GTR-E3C by:

DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

Part Details for H5DU2562GTR-E3C by SK Hynix Inc

Overview of H5DU2562GTR-E3C by SK Hynix Inc

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Price & Stock for H5DU2562GTR-E3C

Part # Distributor Description Stock Price Buy
Bristol Electronics   50
RFQ
Quest Components 16M X 16 DDR DRAM, 0.7 ns, PDSO66 40
  • 1 $8.7780
  • 4 $6.4372
  • 13 $5.8520
$5.8520 / $8.7780 Buy Now
Chip1Cloud DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 66-Pin TSOP-II 10500
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 40
  • 1 $6.1500
  • 100 $4.6200
  • 1,000 $4.0000
$4.0000 / $6.1500 Buy Now

Part Details for H5DU2562GTR-E3C

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H5DU2562GTR-E3C Part Data Attributes:

H5DU2562GTR-E3C SK Hynix Inc
Buy Now Datasheet
Compare Parts:
H5DU2562GTR-E3C SK Hynix Inc DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
Pin Count 66
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e6
Length 22.225 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.194 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.004 A
Supply Current-Max 0.21 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20
Width 10.155 mm

Alternate Parts for H5DU2562GTR-E3C

This table gives cross-reference parts and alternative options found for H5DU2562GTR-E3C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5DU2562GTR-E3C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
H5DU2562GTR-E3L DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 SK Hynix Inc H5DU2562GTR-E3C vs H5DU2562GTR-E3L
NT5DS16M16DS-5T DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-66 Nanya Technology Corporation H5DU2562GTR-E3C vs NT5DS16M16DS-5T
Part Number Description Manufacturer Compare
MT46V16M16P-6RL DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc H5DU2562GTR-E3C vs MT46V16M16P-6RL
V58C2256164SAT6 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 Mosel Vitelic Corporation H5DU2562GTR-E3C vs V58C2256164SAT6
EDD2516AKTA-6BTI-E DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Elpida Memory Inc H5DU2562GTR-E3C vs EDD2516AKTA-6BTI-E
V58C2256164SGI-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSSOP2-66 ProMOS Technologies Inc H5DU2562GTR-E3C vs V58C2256164SGI-6
W9425G6EH-6 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp H5DU2562GTR-E3C vs W9425G6EH-6
V58C2256164SCLI6I DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc H5DU2562GTR-E3C vs V58C2256164SCLI6I
IS46R16160B-6TLA Synchronous DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Integrated Silicon Solution Inc H5DU2562GTR-E3C vs IS46R16160B-6TLA
AS4C16M16D1-5TCN Synchronous DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOPII-66 Alliance Memory Inc H5DU2562GTR-E3C vs AS4C16M16D1-5TCN
K4D551638F-LC600 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor H5DU2562GTR-E3C vs K4D551638F-LC600
V58C2256164SHLE6I DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc H5DU2562GTR-E3C vs V58C2256164SHLE6I

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