Datasheets
H5TQ4G63EFR-RDC by: SK Hynix Inc

DDR DRAM,

Part Details for H5TQ4G63EFR-RDC by SK Hynix Inc

Results Overview of H5TQ4G63EFR-RDC by SK Hynix Inc

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Applications Consumer Electronics

H5TQ4G63EFR-RDC Information

H5TQ4G63EFR-RDC by SK Hynix Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for H5TQ4G63EFR-RDC

Part # Distributor Description Stock Price Buy
LCSC SDRAM DDR3 FBGA-96 DDR SDRAM ROHS 630
  • 1 $2.1684
  • 10 $1.8831
  • 30 $1.7037
  • 160 $1.4078
  • 480 $1.3250
  • 960 $1.2882
$1.2882 / $2.1684 Buy Now
Vyrian Memory ICs 661
RFQ
Win Source Electronics   70000
  • 45 $1.2487
  • 90 $1.1681
  • 135 $1.1278
  • 195 $1.0473
  • 250 $1.0070
  • 315 $0.9667
$0.9667 / $1.2487 Buy Now

Part Details for H5TQ4G63EFR-RDC

H5TQ4G63EFR-RDC CAD Models

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H5TQ4G63EFR-RDC Part Data Attributes

H5TQ4G63EFR-RDC SK Hynix Inc
Buy Now Datasheet
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H5TQ4G63EFR-RDC SK Hynix Inc DDR DRAM,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B96
Length 13 mm
Memory Density 4294967296 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 256MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.5 mm

Alternate Parts for H5TQ4G63EFR-RDC

This table gives cross-reference parts and alternative options found for H5TQ4G63EFR-RDC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5TQ4G63EFR-RDC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
H5TQ4G63EFR-H9L SK Hynix Inc Check for Price DDR DRAM, H5TQ4G63EFR-RDC vs H5TQ4G63EFR-H9L
H5TC4G63CFR-RDI SK Hynix Inc Check for Price DRAM Module, 256MX16, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-RDI
H5TC4G63CFR-RDR SK Hynix Inc Check for Price DRAM Module, 256MX16, 0.195ns, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-RDR
H5TC4G63CFR-PBR SK Hynix Inc Check for Price DRAM Module, 256MX16, 0.225ns, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-PBR
H5TC4G63CFR-RDA SK Hynix Inc Check for Price DRAM Module, 256MX16, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-RDA
H5TQ4G63CFR-TEL SK Hynix Inc Check for Price DDR DRAM, 256MX16, CMOS, PBGA96, FPBGA-96 H5TQ4G63EFR-RDC vs H5TQ4G63CFR-TEL
H5TC4G63EFR-H9L SK Hynix Inc Check for Price DDR DRAM, H5TQ4G63EFR-RDC vs H5TC4G63EFR-H9L
H5TQ4G63EFR-TEI SK Hynix Inc Check for Price DDR DRAM, H5TQ4G63EFR-RDC vs H5TQ4G63EFR-TEI
H5TC4G63CFR-PBL SK Hynix Inc Check for Price DRAM Module, 256MX16, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-PBL
H5TC4G63CFR-G7R SK Hynix Inc Check for Price DRAM Module, 256MX16, 0.3ns, CMOS, PBGA96, FBGA-96 H5TQ4G63EFR-RDC vs H5TC4G63CFR-G7R

H5TQ4G63EFR-RDC Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the H5TQ4G63EFR-RDC is 0°C to 85°C.

  • To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB design. Additionally, using a clock signal with a high slew rate and a low jitter can help improve signal integrity.

  • The recommended voltage for the H5TQ4G63EFR-RDC is 1.2V ± 0.06V.

  • The H5TQ4G63EFR-RDC requires a refresh command every 64ms to maintain data integrity. The refresh command should be issued during the self-refresh mode to minimize power consumption.

  • The maximum current consumption for the H5TQ4G63EFR-RDC is 1.5A during write operations and 1.2A during read operations.

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