Memory
HY57V161610ET-55I
SK Hynix Inc
Description: Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Overview of HY57V161610ET-55I by SK Hynix Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for HY57V161610ET-55I by SK Hynix Inc
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Part Data Attributes for HY57V161610ET-55I by SK Hynix Inc

HY57V161610ET-55I
SK Hynix Inc
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
TSOP2
Package Description
TSOP2, TSOP50,.46,32
Pin Count
50
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
5 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
183 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G50
Length
20.968 mm
Memory Density
16777216 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
1MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP50,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.001 A
Supply Current-Max
0.13 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3.15 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
10.16 mm
Want to compare parts?
  1. HY57V161610ET-55I
    SK Hynix Inc
    Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
    VS

Alternate Parts for HY57V161610ET-55I

This table gives cross-reference parts and alternative options found for HY57V161610ET-55I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610ET-55I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610ET-55I vs VG3617161ET-8
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc HY57V161610ET-55I vs IS42S16100B-6T
K4S161622D-TI10 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor HY57V161610ET-55I vs K4S161622D-TI10
HY57V161610DLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610ET-55I vs HY57V161610DLTC-10S
UPD4516161AG5-A80-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HY57V161610ET-55I vs UPD4516161AG5-A80-9NF
K4S161622E-TI55 Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor HY57V161610ET-55I vs K4S161622E-TI55
HY57V161610DTC-15 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610ET-55I vs HY57V161610DTC-15
UPD4516161AG5-A12-9NF Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group HY57V161610ET-55I vs UPD4516161AG5-A12-9NF
IS42VS16100D-75T Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc HY57V161610ET-55I vs IS42VS16100D-75T
HYB39S16160AT-8 Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, TSSOP2-50 Siemens HY57V161610ET-55I vs HYB39S16160AT-8

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