Part Details for HY57V643220DT-7 by SK Hynix Inc
Overview of HY57V643220DT-7 by SK Hynix Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Entertainment and Gaming
Price & Stock for HY57V643220DT-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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Sense Electronic Company Limited | TSSOP | 649 |
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RFQ |
Part Details for HY57V643220DT-7
HY57V643220DT-7 CAD Models
HY57V643220DT-7 Part Data Attributes:
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HY57V643220DT-7
SK Hynix Inc
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Datasheet
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HY57V643220DT-7
SK Hynix Inc
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP86,.46,20 | |
| Pin Count | 86 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 143 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e0 | |
| Length | 22.238 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.194 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.21 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V643220DT-7
This table gives cross-reference parts and alternative options found for HY57V643220DT-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V643220DT-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V643220CT-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 | SK Hynix Inc | HY57V643220DT-7 vs HY57V643220CT-7 |
| IS42S32200-7TLI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | HY57V643220DT-7 vs IS42S32200-7TLI |
| K4S643232F-TC70 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | HY57V643220DT-7 vs K4S643232F-TC70 |
| HY57V643220CTP-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 | SK Hynix Inc | HY57V643220DT-7 vs HY57V643220CTP-7 |
| HY57V653220CTC-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | HY57V643220DT-7 vs HY57V653220CTC-7 |
| IS42S32200E-7TL-TR | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | HY57V643220DT-7 vs IS42S32200E-7TL-TR |
| HY57V653220BTC-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | HY57V643220DT-7 vs HY57V653220BTC-7 |
| IS42S32200-7TL | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 | Integrated Silicon Solution Inc | HY57V643220DT-7 vs IS42S32200-7TL |
| K4S643232H-UC70T | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS COMPLIANT, TSOP2-86 | Samsung Semiconductor | HY57V643220DT-7 vs K4S643232H-UC70T |
| HY57V643220CT-7I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 | SK Hynix Inc | HY57V643220DT-7 vs HY57V643220CT-7I |