Part Details for HYB18T512400AF-3S by Infineon Technologies AG
Overview of HYB18T512400AF-3S by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Environmental Monitoring
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Electronic Manufacturing
Entertainment and Gaming
Price & Stock for HYB18T512400AF-3S
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 128M X 4 DDR DRAM, 0.45 ns, PBGA60 | 394 |
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$5.0400 / $12.6000 | Buy Now |
Part Details for HYB18T512400AF-3S
HYB18T512400AF-3S CAD Models
HYB18T512400AF-3S Part Data Attributes:
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HYB18T512400AF-3S
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
HYB18T512400AF-3S
Infineon Technologies AG
DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | BGA | |
| Package Description | TFBGA, | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 10.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 128MX4 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for HYB18T512400AF-3S
This table gives cross-reference parts and alternative options found for HYB18T512400AF-3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T512400AF-3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V59C1512404QBF3I | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-3S vs V59C1512404QBF3I |
| K4T51043QC-ZLD60 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | HYB18T512400AF-3S vs K4T51043QC-ZLD60 |
| EDE5104AHSE-6E-E | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Elpida Memory Inc | HYB18T512400AF-3S vs EDE5104AHSE-6E-E |
| V59C1512404QCLF3I | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-3S vs V59C1512404QCLF3I |
| HYB18T512400AF-3 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Infineon Technologies AG | HYB18T512400AF-3S vs HYB18T512400AF-3 |
| HYB18T512400AC-3 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 10.50 X 10 MM, MO-207DJ-Z, FBGA-60 | Infineon Technologies AG | HYB18T512400AF-3S vs HYB18T512400AC-3 |
| V59C1512404QBLF3 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, M0-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-3S vs V59C1512404QBLF3 |
| HY5PS12421CFLP-S5 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | HYB18T512400AF-3S vs HY5PS12421CFLP-S5 |
| V59C1512404QBLF3I | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-3S vs V59C1512404QBLF3I |
| EDE5104AJSE-6E-E | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Elpida Memory Inc | HYB18T512400AF-3S vs EDE5104AJSE-6E-E |