Datasheets
IPB100N04S4H2ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB100N04S4H2ATMA1 by Infineon Technologies AG

Overview of IPB100N04S4H2ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB100N04S4H2ATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPB100N04S4H2ATMA1CT-ND
DigiKey MOSFET N-CH 40V 100A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4996
In Stock
  • 1 $2.7400
  • 10 $2.2720
  • 100 $1.8080
  • 500 $1.5298
  • 1,000 $1.2980
  • 2,000 $1.2331
  • 5,000 $1.1868
$1.1868 / $2.7400 Buy Now
DISTI # IPB100N04S4H2ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB100N04S4H2ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.4229
$1.4229 Buy Now
DISTI # 726-IPB100N04S4H2ATM
Mouser Electronics MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 RoHS: Compliant 1980
  • 1 $1.7800
  • 10 $1.5400
  • 100 $1.3300
  • 250 $1.3200
  • 500 $1.1900
  • 1,000 $1.1600
$1.1600 / $1.7800 Buy Now
Rochester Electronics IPB100N04 - OptlMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 3800
  • 1 $1.3400
  • 25 $1.3100
  • 100 $1.2600
  • 500 $1.2000
  • 1,000 $1.1400
$1.1400 / $1.3400 Buy Now
DISTI # IPB100N04S4H2ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB100N04S4H2ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.4229
$1.4229 Buy Now
Ameya Holding Limited   Min Qty: 50 980
  • 50 $2.2726
  • 100 $2.1593
  • 250 $2.0078
  • 500 $1.8274
$1.8274 / $2.2726 Buy Now
Ameya Holding Limited MOSFET_(20V,40V) 990
RFQ
DISTI # IPB100N04S4H2ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB100N04S4H2ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.4229
$1.4229 Buy Now
Chip 1 Exchange INSTOCK 2965
RFQ
DISTI # SP000711274
EBV Elektronik Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R (Alt: SP000711274) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IPB100N04S4H2ATMA1

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IPB100N04S4H2ATMA1 Part Data Attributes

IPB100N04S4H2ATMA1 Infineon Technologies AG
Buy Now Datasheet
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IPB100N04S4H2ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB100N04S4H2ATMA1

This table gives cross-reference parts and alternative options found for IPB100N04S4H2ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S4H2ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB100N04S4-H2 Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPB100N04S4-H2
Part Number Description Manufacturer Compare
IPI90N04S402AKSA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPI90N04S402AKSA1
IPP100N04S403DXKSA1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPP100N04S403DXKSA1
IPI100N04S4H2XK Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPI100N04S4H2XK
IPB100N04S4-H2 Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPB100N04S4-H2
IPP100N04S4-H2 Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPP100N04S4-H2
IPI90N04S4-02 Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPI90N04S4-02
IPP100N04S4H2AKSA1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB100N04S4H2ATMA1 vs IPP100N04S4H2AKSA1

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