Part Details for IPB80N06S208ATMA2 by Infineon Technologies AG
Overview of IPB80N06S208ATMA2 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPB80N06S208ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPB80N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 8000 |
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$1.3900 / $1.6400 | Buy Now |
Part Details for IPB80N06S208ATMA2
IPB80N06S208ATMA2 CAD Models
IPB80N06S208ATMA2 Part Data Attributes
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IPB80N06S208ATMA2
Infineon Technologies AG
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Datasheet
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IPB80N06S208ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 450 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB80N06S208ATMA2
This table gives cross-reference parts and alternative options found for IPB80N06S208ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N06S208ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FS70VSH-06-T1 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN | Mitsubishi Electric | IPB80N06S208ATMA2 vs FS70VSH-06-T1 |
FS70VSJ-06-T2 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | IPB80N06S208ATMA2 vs FS70VSJ-06-T2 |
IRF1010ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IPB80N06S208ATMA2 vs IRF1010ZS |
IRL3705ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IPB80N06S208ATMA2 vs IRL3705ZS |
FS70VSH-06-T2 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN | Mitsubishi Electric | IPB80N06S208ATMA2 vs FS70VSH-06-T2 |
TK70X06K3 | TRANSISTOR 70 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-9F1C, SC-97, 4 PIN, FET General Purpose Power | Toshiba America Electronic Components | IPB80N06S208ATMA2 vs TK70X06K3 |
STB80NF55-08-1 | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | IPB80N06S208ATMA2 vs STB80NF55-08-1 |
IRL3705Z | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB80N06S208ATMA2 vs IRL3705Z |
NP80N06NLG-S18-AY | Power MOSFETs for Automotive, MP-25SK, /Tube | Renesas Electronics Corporation | IPB80N06S208ATMA2 vs NP80N06NLG-S18-AY |
STP60N55F3 | 80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | IPB80N06S208ATMA2 vs STP60N55F3 |