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Transistors / Power Field-Effect Transistors / IPD30N06S2L23ATMA3
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IPD30N06S2L23ATMA3 by: Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN

Part Details for IPD30N06S2L23ATMA3 by Infineon Technologies AG

Overview of IPD30N06S2L23ATMA3 by Infineon Technologies AG

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Price & Stock for IPD30N06S2L23ATMA3

Part # Distributor Description Stock Price Buy
DISTI # IPD30N06S2L23ATMA3CT-ND
DigiKey MOSFET N-CH 55V 30A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 14117
In Stock
  • 1 $0.9300
  • 10 $0.7630
  • 100 $0.5934
  • 500 $0.5030
  • 1,000 $0.4975
  • 2,500 $0.4975
$0.4975 / $0.9300 Buy Now
DISTI # IPD30N06S2L23ATMA3
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S2L23ATMA3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5830
$0.5830 Buy Now
DISTI # 12AC9710
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 12AC9710) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack 2180 Partner Stock
  • 1 $1.2500
  • 10 $1.0300
  • 25 $0.9800
  • 50 $0.9290
  • 100 $0.8780
$0.8780 / $1.2500 Buy Now
DISTI # 726-IPD30N06S2L23AT3
Mouser Electronics MOSFET MOSFET_)40V 60V) RoHS: Compliant 65966
  • 1 $0.8200
  • 10 $0.6900
  • 100 $0.5940
  • 500 $0.5030
  • 1,000 $0.4980
  • 2,500 $0.4890
  • 5,000 $0.4760
  • 10,000 $0.4710
$0.4710 / $0.8200 Buy Now
Future Electronics N-Channel 55 V 23 mOhm 42 nC SMT OptiMOS® Power-Transistor - PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.3650
  • 5,000 $0.3550
$0.3550 / $0.3650 Buy Now
Rochester Electronics IPD30N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 434109
  • 1 $0.5485
  • 25 $0.5375
  • 100 $0.5156
  • 500 $0.4936
  • 1,000 $0.4662
$0.4662 / $0.5485 Buy Now
DISTI # IPD30N06S2L23ATMA3
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S2L23ATMA3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5830
$0.5830 Buy Now
DISTI # 12AC9710
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 12AC9710) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack 2180 Partner Stock
  • 1 $1.2500
  • 10 $1.0300
  • 25 $0.9800
  • 50 $0.9290
  • 100 $0.8780
$0.8780 / $1.2500 Buy Now
Ameya Holding Limited   32983
RFQ
DISTI # IPD30N06S2L23ATMA3
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S2L23ATMA3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5830
$0.5830 Buy Now
DISTI # 12AC9710
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 12AC9710) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack 2180 Partner Stock
  • 1 $1.2500
  • 10 $1.0300
  • 25 $0.9800
  • 50 $0.9290
  • 100 $0.8780
$0.8780 / $1.2500 Buy Now
DISTI # SP001061286
EBV Elektronik Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001061286) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.5071
  • 5,000 $0.4733
$0.4733 / $0.5071 Buy Now

Part Details for IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3 CAD Models

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IPD30N06S2L23ATMA3 Part Data Attributes

Parametric Data
IPD30N06S2L23ATMA3 Infineon Technologies AG
Buy Now Datasheet
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IPD30N06S2L23ATMA3 Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-252-3-11, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks, 4 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD30N06S2L23ATMA3

This table gives cross-reference parts and alternative options found for IPD30N06S2L23ATMA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N06S2L23ATMA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB5690L86Z Power Field-Effect Transistor, 32A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IPD30N06S2L23ATMA3 vs FDB5690L86Z
STL34NF06 34A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, 5 X 5 MM, CHIP SCALE, POWERFLAT-5 STMicroelectronics IPD30N06S2L23ATMA3 vs STL34NF06
BTS247ZXK Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 5 PIN Infineon Technologies AG IPD30N06S2L23ATMA3 vs BTS247ZXK
FS30VS-06-T2 Power Field-Effect Transistor, 30A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric IPD30N06S2L23ATMA3 vs FS30VS-06-T2
FS30AS-06-T2 Power Field-Effect Transistor, 30A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN Mitsubishi Electric IPD30N06S2L23ATMA3 vs FS30AS-06-T2
TK30S06K3L TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components IPD30N06S2L23ATMA3 vs TK30S06K3L
BTS247ZAKSA1 Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 5 PIN Infineon Technologies AG IPD30N06S2L23ATMA3 vs BTS247ZAKSA1

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