Part Details for IPD65R600E6ATMA1 by Infineon Technologies AG
Overview of IPD65R600E6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPD65R600E6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AH5983
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Newark | Mosfet, N Ch, 700V, 7.3A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:7.3A, Drain Source Voltage Vds:700V, On Resistance Rds(On):0.54Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPD65R600E6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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Rochester Electronics | IPD65R600 - CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 47958 |
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$0.7010 / $0.8247 | Buy Now |
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DISTI #
IPD65R600E6ATMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 7.3A, 63W, PG-TO252-3 Min Qty: 1 | 0 |
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$0.7500 / $1.2500 | RFQ |
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DISTI #
2443437RL
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element14 Asia-Pacific | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 100 Container: Reel | 2516 |
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$0.7938 / $1.1870 | Buy Now |
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DISTI #
2443437
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element14 Asia-Pacific | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 2516 |
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$0.7938 / $1.7657 | Buy Now |
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DISTI #
2443437RL
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Farnell | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 10 Lead time: 51 Weeks, 1 Days Container: Reel | 2516 |
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$0.6834 | Buy Now |
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DISTI #
2443437
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Farnell | MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 2516 |
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$0.6834 / $0.8729 | Buy Now |
Part Details for IPD65R600E6ATMA1
IPD65R600E6ATMA1 CAD Models
IPD65R600E6ATMA1 Part Data Attributes:
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IPD65R600E6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD65R600E6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 142 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD65R600E6ATMA1
This table gives cross-reference parts and alternative options found for IPD65R600E6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R600E6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD65R600C6BTMA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6ATMA1 vs IPD65R600C6BTMA1 |
| AP07SL60H-A | POWER, FET | Advanced Power Electronics Corp | IPD65R600E6ATMA1 vs AP07SL60H-A |
| IPD65R600E6BTMA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6ATMA1 vs IPD65R600E6BTMA1 |
| IPD65R600E6 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6ATMA1 vs IPD65R600E6 |
| IPD65R600C6AT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R600E6ATMA1 vs IPD65R600C6AT |
| IPD65R600C6 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R600E6ATMA1 vs IPD65R600C6 |