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Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF9540NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7431
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Newark | P Channel Mosfet, -100V, -23A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:23A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF9540NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 59803 |
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$0.5440 / $1.2800 | Buy Now |
DISTI #
IRF9540NPBF
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Avnet Americas | Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9540NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube | 2237 |
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$0.4150 / $0.4880 | Buy Now |
DISTI #
63J7431
|
Avnet Americas | Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7431) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Bulk | 50 Partner Stock |
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$0.5880 / $1.2800 | Buy Now |
DISTI #
70017013
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RS | Power MOSFET, P-Ch, VDSS -100V, RDS(ON) 0.117Ohm, ID -23A, TO-220AB, PD 140W, VGS+/-20V | Infineon IRF9540NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.9400 / $1.2400 | RFQ |
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Bristol Electronics | Min Qty: 4 | 40 |
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$0.9750 / $1.5000 | Buy Now |
DISTI #
IRF9540NPBF
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TME | Transistor: P-MOSFET, unipolar, -100V, -23A, 140W, TO220AB Min Qty: 1 | 0 |
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$0.5540 / $1.2050 | RFQ |
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Ameya Holding Limited | Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3 | 10000 |
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RFQ | |
DISTI #
SMC-IRF9540NPBF
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 2000 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 5090 |
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RFQ | |
DISTI #
C1S322000487846
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Chip1Stop | Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube | 13879 |
|
$0.3600 / $0.9450 | Buy Now |
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IRF9540NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9540NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 430 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 76 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF9540NPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF9540NPBF vs IRF9540NPBF |
IRF9540N | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF9540NPBF vs IRF9540N |
AUIRF9540N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | IRF9540NPBF vs AUIRF9540N |
AUIRF9540N | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | IRF9540NPBF vs AUIRF9540N |
FX30UM-2 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 30A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF9540NPBF vs FX30UM-2 |
IRFP9150 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRF9540NPBF vs IRFP9150 |
RFH25P10 | Intersil Corporation | Check for Price | 25A, 100V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC | IRF9540NPBF vs RFH25P10 |
RFH25P10 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | IRF9540NPBF vs RFH25P10 |
IRFP9150 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRF9540NPBF vs IRFP9150 |