Part Details for IRFD310 by Harris Semiconductor
Overview of IRFD310 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFD310
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-IRFD310-ND
|
DigiKey | 0.4A 400V 3.600 OHM N-CHANNEL Min Qty: 243 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
3189 In Stock |
|
$1.2400 | Buy Now |
|
Rochester Electronics | IRFD310 - 0.4A, 400V, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3189 |
|
$1.0600 / $1.2500 | Buy Now |
Part Details for IRFD310
IRFD310 CAD Models
IRFD310 Part Data Attributes
|
IRFD310
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRFD310
Harris Semiconductor
Small Signal Field-Effect Transistor, 0.4A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 0.4 A | |
Drain-source On Resistance-Max | 3.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |