Part Details for IRFF9110 by Infineon Technologies AG
Overview of IRFF9110 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IRFF9110
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
|
$13.2000 | Buy Now |
Part Details for IRFF9110
IRFF9110 CAD Models
IRFF9110 Part Data Attributes
|
|
IRFF9110
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFF9110
Infineon Technologies AG
Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 87 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 1.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF9110
This table gives cross-reference parts and alternative options found for IRFF9110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF9110 | 2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9110 vs IRFF9110 |
| IRFF9110 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9110 vs IRFF9110 |
| IRFF9110E1 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9110 vs IRFF9110E1 |
| IRFF9110 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF9110 vs IRFF9110 |
| IRFF9110-JQR-BE1 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9110 vs IRFF9110-JQR-BE1 |
| IRFF9110-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF9110 vs IRFF9110-JQR-B |
| NSFJ9110 | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN | Microsemi Corporation | IRFF9110 vs NSFJ9110 |
| IRFF9110-JQR-BE1 | 2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9110 vs IRFF9110-JQR-BE1 |
| IRFF9110E1 | 2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF9110 vs IRFF9110E1 |
| IRFF9110PBF | Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF9110 vs IRFF9110PBF |