Part Details for IRFG6110 by International Rectifier
Overview of IRFG6110 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFG6110
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 26 |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1A I(D), 100V, 0.8OHM, 4-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-036AB | 1 |
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$170.9430 / $179.9400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 1A I(D), 100V, 0.8OHM, 4-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-036AB | 2 |
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$170.9430 / $179.9400 | Buy Now |
Part Details for IRFG6110
IRFG6110 CAD Models
IRFG6110 Part Data Attributes:
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IRFG6110
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFG6110
International Rectifier
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-CDIP-T14 | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 75 mJ | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-036AB | |
| JESD-30 Code | R-CDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFG6110
This table gives cross-reference parts and alternative options found for IRFG6110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFG6110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFG6110 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110 vs IRFG6110 |
| 2N7336 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, | Infineon Technologies AG | IRFG6110 vs 2N7336 |
| 2N7336-QR-BR1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110 vs 2N7336-QR-BR1 |
| 2N7336-QR-B | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110 vs 2N7336-QR-B |
| 2N7336PBF | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | International Rectifier | IRFG6110 vs 2N7336PBF |
| IRFG6110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | Infineon Technologies AG | IRFG6110 vs IRFG6110 |
| IRFG6110-JQR-BR1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110 vs IRFG6110-JQR-BR1 |
| IRFG6110R1 | 1A, 100V, 0.8ohm, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, DIP-14 | TT Electronics Power and Hybrid / Semelab Limited | IRFG6110 vs IRFG6110R1 |
| IRFG6110PBF | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | IRFG6110 vs IRFG6110PBF |
| 2N7336-QR-B | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14 | TT Electronics Resistors | IRFG6110 vs 2N7336-QR-B |