Datasheets
IRFL9014 by:

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Details for IRFL9014 by International Rectifier

Overview of IRFL9014 by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFL9014

Part # Distributor Description Stock Price Buy
Bristol Electronics   550
RFQ
Bristol Electronics   Min Qty: 7 70
  • 7 $0.7500
  • 28 $0.4875
$0.4875 / $0.7500 Buy Now
Bristol Electronics   129
RFQ
Quest Components MOSFET Transistor, P-Channel, TO-261AA 2
  • 1 $0.9300
$0.9300 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 56
  • 1 $1.0000
  • 6 $0.8000
  • 26 $0.5000
$0.5000 / $1.0000 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 48
  • 1 $1.4000
  • 5 $1.1200
  • 19 $0.8400
$0.8400 / $1.4000 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 53
  • 1 $4.0000
  • 9 $2.5000
  • 31 $2.2000
$2.2000 / $4.0000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 30
  • 1 $7.6900
  • 100 $5.7700
  • 1,000 $5.0000
$5.0000 / $7.6900 Buy Now

Part Details for IRFL9014

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IRFL9014 Part Data Attributes

IRFL9014 International Rectifier
Buy Now Datasheet
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IRFL9014 International Rectifier Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SOT-223, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 3.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL9014

This table gives cross-reference parts and alternative options found for IRFL9014. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL9014 vs IRFL9014TR
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL9014 vs IRFL9014PBF
Part Number Description Manufacturer Compare
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL9014 vs IRFL9014TR
BSP170P Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014 vs BSP170P
NDT2955_NL Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL9014 vs NDT2955_NL
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi IRFL9014 vs NDT2955
NDT2955 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC IRFL9014 vs NDT2955
BSP170P Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens IRFL9014 vs BSP170P
RFT1P06E Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL9014 vs RFT1P06E
BSP613P Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG IRFL9014 vs BSP613P

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