Datasheets
IRFL9014PBF by:

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL9014PBF by Vishay Intertechnologies

Overview of IRFL9014PBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFL9014PBF

Part # Distributor Description Stock Price Buy
DISTI # 70078920
RS MOSFET, Power, P-Ch, VDSS -60V, RDS(ON) 0.5Ohm, ID -1.8A, SOT-223,PD 3.1W, VGS +/-20V | Vishay PCS IRFL9014PBF RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Container: Bulk 0
  • 4,000 $0.4620
  • 40,000 $0.4390
  • 200,000 $0.4160
  • 400,000 $0.3930
$0.3930 / $0.4620 RFQ
Bristol Electronics   117
RFQ

Part Details for IRFL9014PBF

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IRFL9014PBF Part Data Attributes

IRFL9014PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL9014PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL9014PBF

This table gives cross-reference parts and alternative options found for IRFL9014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SP001058824 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRFL9014PBF vs SP001058824
BSP171PH6327 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014PBF vs BSP171PH6327
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies IRFL9014PBF vs IRFL9014
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix IRFL9014PBF vs IRFL9014TR
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL9014PBF vs IRFL9014TRPBF
BSP171PH6327XTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014PBF vs BSP171PH6327XTSA1
SIHFL9014TR-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay Siliconix IRFL9014PBF vs SIHFL9014TR-GE3
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix IRFL9014PBF vs IRFL9014
SIHFL9014-GE3 TRANSISTOR 1800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal Vishay Siliconix IRFL9014PBF vs SIHFL9014-GE3
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix IRFL9014PBF vs IRFL9014TRPBF
Part Number Description Manufacturer Compare
SIHFL9014TR-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay Siliconix IRFL9014PBF vs SIHFL9014TR-GE3
BSP171PL6327HTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014PBF vs BSP171PL6327HTSA1
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix IRFL9014PBF vs IRFL9014TRPBF
SIHFL9014-GE3 TRANSISTOR 1800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal Vishay Siliconix IRFL9014PBF vs SIHFL9014-GE3
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies IRFL9014PBF vs IRFL9014
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL9014PBF vs IRFL9014TRPBF
SP001058824 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRFL9014PBF vs SP001058824
BSP171PH6327 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014PBF vs BSP171PH6327
BSP171PH6327XTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL9014PBF vs BSP171PH6327XTSA1
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix IRFL9014PBF vs IRFL9014

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