Datasheets
IRFL9014PBF by:

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL9014PBF by Vishay Intertechnologies

Results Overview of IRFL9014PBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRFL9014PBF Information

IRFL9014PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFL9014PBF

Part # Distributor Description Stock Price Buy
DISTI # 70078920
RS MOSFET, Power, P-Ch, VDSS -60V, RDS(ON) 0.5Ohm, ID -1.8A, SOT-223,PD 3.1W, VGS +/-20V | Vishay PCS IRFL9014PBF RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Container: Bulk 0
  • 4,000 $0.4930
$0.4930 RFQ
Bristol Electronics   117
RFQ
DISTI # IRFL9014PBF
EBV Elektronik MOSFET PCHANNEL 60V (Alt: IRFL9014PBF) RoHS: Compliant Min Qty: 80 Package Multiple: 80 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFL9014PBF

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IRFL9014PBF Part Data Attributes

IRFL9014PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL9014PBF Vishay Intertechnologies Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL9014PBF

This table gives cross-reference parts and alternative options found for IRFL9014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIHFL9014TR-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN IRFL9014PBF vs SIHFL9014TR-GE3
IRFL9014TR Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN IRFL9014PBF vs IRFL9014TR
IRFL9014TRPBF-BE3 Vishay Intertechnologies $0.9249 Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, IRFL9014PBF vs IRFL9014TRPBF-BE3
Part Number Manufacturer Composite Price Description Compare
IRFL9014TRPBF Vishay Siliconix Check for Price TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power IRFL9014PBF vs IRFL9014TRPBF
SIHFL9014TR-GE3 Vishay Siliconix Check for Price TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal IRFL9014PBF vs SIHFL9014TR-GE3
IRFL9014 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA IRFL9014PBF vs IRFL9014
BSP171PH6327XTSA1 Infineon Technologies AG $0.4584 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 IRFL9014PBF vs BSP171PH6327XTSA1
IRFL9014 Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN IRFL9014PBF vs IRFL9014
IRFL9014TR Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA IRFL9014PBF vs IRFL9014TR
SP001058824 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IRFL9014PBF vs SP001058824
BSP171PL6327HTSA1 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 IRFL9014PBF vs BSP171PL6327HTSA1
BSP171PH6327 Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 IRFL9014PBF vs BSP171PH6327
IRFL9014TRPBF Vishay Intertechnologies $0.4625 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN IRFL9014PBF vs IRFL9014TRPBF

IRFL9014PBF Related Parts

IRFL9014PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFL9014PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.

  • The recommended gate drive voltage for the IRFL9014PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFL9014PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.

  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

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