Part Details for IRFL9014PBF by Vishay Siliconix
Results Overview of IRFL9014PBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFL9014PBF Information
IRFL9014PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFL9014PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70459457
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RS | MOSFET P-CH 60V 1.8A SOT223 | Siliconix / Vishay IRFL9014PBF RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Container: Bulk | 0 |
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$0.3550 / $0.4170 | RFQ |
Part Details for IRFL9014PBF
IRFL9014PBF CAD Models
IRFL9014PBF Part Data Attributes
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IRFL9014PBF
Vishay Siliconix
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Datasheet
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IRFL9014PBF
Vishay Siliconix
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SOT-223, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFL9014PBF
This table gives cross-reference parts and alternative options found for IRFL9014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFL9014PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | IRFL9014PBF vs IRFL9014PBF |
IRFL9014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL9014PBF vs IRFL9014 |
NDT2955 | onsemi | $0.3067 | P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, SOT-223-4 / TO-261-4, 4000-REEL | IRFL9014PBF vs NDT2955 |
RFT1P06E | Intersil Corporation | Check for Price | 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET | IRFL9014PBF vs RFT1P06E |
BSP613P | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | IRFL9014PBF vs BSP613P |
BSP170P | Siemens | Check for Price | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | IRFL9014PBF vs BSP170P |
NDT2955 | Rochester Electronics LLC | Check for Price | 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET | IRFL9014PBF vs NDT2955 |
RFT1P06E | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | IRFL9014PBF vs RFT1P06E |
NDT2955 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | IRFL9014PBF vs NDT2955 |
IRFL9014TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL9014PBF vs IRFL9014TR |