Datasheets
IRFL9014PBF by:

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL9014PBF by Vishay Siliconix

Results Overview of IRFL9014PBF by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRFL9014PBF Information

IRFL9014PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFL9014PBF

Part # Distributor Description Stock Price Buy
DISTI # 70459457
RS MOSFET P-CH 60V 1.8A SOT223 | Siliconix / Vishay IRFL9014PBF RoHS: Not Compliant Min Qty: 4000 Package Multiple: 1 Container: Bulk 0
  • 4,000 $0.4170
  • 40,000 $0.3960
  • 200,000 $0.3760
  • 400,000 $0.3550
$0.3550 / $0.4170 RFQ

Part Details for IRFL9014PBF

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IRFL9014PBF Part Data Attributes

IRFL9014PBF Vishay Siliconix
Buy Now Datasheet
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IRFL9014PBF Vishay Siliconix Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL9014PBF

This table gives cross-reference parts and alternative options found for IRFL9014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFL9014PBF International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 IRFL9014PBF vs IRFL9014PBF
IRFL9014 International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA IRFL9014PBF vs IRFL9014
NDT2955 onsemi $0.3067 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, SOT-223-4 / TO-261-4, 4000-REEL IRFL9014PBF vs NDT2955
RFT1P06E Intersil Corporation Check for Price 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET IRFL9014PBF vs RFT1P06E
BSP613P Infineon Technologies AG Check for Price Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN IRFL9014PBF vs BSP613P
BSP170P Siemens Check for Price Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET IRFL9014PBF vs BSP170P
NDT2955 Rochester Electronics LLC Check for Price 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET IRFL9014PBF vs NDT2955
RFT1P06E Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET IRFL9014PBF vs RFT1P06E
NDT2955 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET IRFL9014PBF vs NDT2955
IRFL9014TR International Rectifier Check for Price Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA IRFL9014PBF vs IRFL9014TR

IRFL9014PBF Related Parts

IRFL9014PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFL9014PBF is -55°C to 175°C.

  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.

  • The recommended gate drive voltage for the IRFL9014PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFL9014PBF is suitable for switching applications, but ensure that the switching frequency is within the recommended range (typically up to 100 kHz) and follow proper PCB layout and design guidelines.

  • Handle the IRFL9014PBF with ESD-protective equipment, and ensure that the device is properly grounded during handling and assembly.

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