| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT4540BN | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 16A I(D), N-Channel, Metal-oxide Semiconductor FET | IRFP451 vs APT4540BN |
| 2SK2257-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 17A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFP451 vs 2SK2257-01 |
| FAP450 | Fuji Electric Co Ltd | Check for Price | 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, TO-3P, 3 PIN | IRFP451 vs FAP450 |
| IRFP450LC | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRFP451 vs IRFP450LC |
| STW15NB50 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP451 vs STW15NB50 |
| 2SK693 | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFP451 vs 2SK693 |
| IRFP451 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFP451 vs IRFP451 |
| IRFP451 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRFP451 vs IRFP451 |
| IRFP450LC | International Rectifier | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP451 vs IRFP450LC |
| IRFP451 | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP451 vs IRFP451 |
Part Details for IRFP451 by STMicroelectronics
Results Overview of IRFP451 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP451 Information
IRFP451 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: IRFP451 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
IRFP451 Part Data Attributes
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IRFP451
STMicroelectronics
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Datasheet
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IRFP451
STMicroelectronics
Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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| Pbfree Code | No | |
| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | High Voltage, Fast Switching | |
| Avalanche Energy Rating (Eas) | 760 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 450 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 200 Pf | |
| JEDEC-95 Code | TO-218 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 180 W | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin Lead | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 210 Ns | |
| Turn-on Time-Max (ton) | 150 Ns |
Alternate Parts for IRFP451
This table gives cross-reference parts and alternative options found for IRFP451. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP451, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.