Part Details for IRFR3709Z by International Rectifier
Overview of IRFR3709Z by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR3709Z
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 150 |
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RFQ | ||
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Bristol Electronics | 74 |
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RFQ | ||
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Quest Components | 2304 |
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$0.4900 / $1.4000 | Buy Now | |
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Quest Components | 190 |
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$0.5040 / $1.6800 | Buy Now | |
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Quest Components | 120 |
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$1.1800 / $2.3600 | Buy Now | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 9 |
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$1.7500 / $2.6900 | Buy Now |
Part Details for IRFR3709Z
IRFR3709Z CAD Models
IRFR3709Z Part Data Attributes:
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IRFR3709Z
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR3709Z
International Rectifier
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 340 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR3709Z
This table gives cross-reference parts and alternative options found for IRFR3709Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3709Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709Z vs IRFR3709ZTRLPBF |
IRFR3709ZTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709Z vs IRFR3709ZTRRPBF |
IRFR3709ZTRL | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709Z vs IRFR3709ZTRL |
IRFR3709ZTRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709Z vs IRFR3709ZTRPBF |
IRFR3709ZCPBF | Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3709Z vs IRFR3709ZCPBF |
IRFR3709ZCPBF | Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRFR3709Z vs IRFR3709ZCPBF |
IRFR3709Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709Z vs IRFR3709Z |
IRFR3709ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709Z vs IRFR3709ZPBF |
IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709Z vs IRFR3709ZTRLPBF |