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Transistors / Power Field-Effect Transistors / IRFR5305PBF
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IRFR5305PBF by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRFR5305PBF by Infineon Technologies AG

Overview of IRFR5305PBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for IRFR5305PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J6989
Newark P Channel Mosfet, -55V, 31A, D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:31A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR5305PBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRFR5305PBF-ND
DigiKey MOSFET P-CH 55V 31A DPAK Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
Bristol Electronics   133
RFQ
Quest Components MOSFET Transistor, P-Channel, TO-252AA 15
  • 1 $3.7500
  • 2 $2.8125
  • 10 $2.3438
$2.3438 / $3.7500 Buy Now
DISTI # 8649820
element14 Asia-Pacific MOSFET, P, -55V, -31A, D-PAK RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.7428
  • 10 $0.6097
  • 100 $0.4950
  • 500 $0.4222
  • 1,000 $0.3538
  • 5,000 $0.3317
$0.3317 / $0.7428 Buy Now
DISTI # 8649820
Farnell MOSFET, P, -55V, -31A, D-PAK RoHS: Compliant Min Qty: 5 Lead time: 18 Weeks, 1 Days Container: Each 0
  • 5 $0.9258
  • 25 $0.5904
  • 100 $0.5025
  • 250 $0.4773
  • 500 $0.4648
  • 1,000 $0.4233
  • 5,000 $0.4145
$0.4145 / $0.9258 Buy Now
Win Source Electronics MOSFET P-CH 55V 31A DPAK 489000
  • 105 $0.4950
  • 250 $0.4060
  • 385 $0.3940
  • 525 $0.3810
  • 680 $0.3680
  • 910 $0.3300
$0.3300 / $0.4950 Buy Now

Part Details for IRFR5305PBF

IRFR5305PBF CAD Models

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IRFR5305PBF Part Data Attributes

Parametric Data
IRFR5305PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFR5305PBF Infineon Technologies AG Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR5305PBF

This table gives cross-reference parts and alternative options found for IRFR5305PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5305PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305
AUIRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs AUIRFR5305TR
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TRPBF
AUIRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305PBF vs AUIRFR5305
IRFR5305TRRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TRRPBF
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR5305PBF vs IRFR5305TRPBF
IRFR5305TRR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TRR
IRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TRL
IRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TR
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305PBF
Part Number Description Manufacturer Compare
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR5305PBF vs IRFR5305TRPBF
AUIRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs AUIRFR5305TR
AUIRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305PBF vs AUIRFR5305
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305PBF vs IRFR5305HR
FQB27P06TM Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, 800-REEL onsemi IRFR5305PBF vs FQB27P06TM
IRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TR
AUIRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs AUIRFR5305
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305
IRFR5305TRLPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305TRLPBF
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305PBF vs IRFR5305PBF

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